byt08p/600a/800a vishay semiconductors www.vishay.de ? faxback +1-408-970-5600 rev. 4, 27-sep-00 1 (5) document number 86017 super fast recovery silicon power rectifier features multiple diffusion low switch on power losses good soft recovery behaviour fast forward recovery time fast reverse recovery time low reverse current very low turn on transient peak voltage very good reverse current stability at high tem- perature low thermal resistance applications fast rectifiers in s.m.p.s freewheeling diodes and snubber diodes in motor control circuits 14282 absolute maximum ratings t j = 25 c parameter test conditions type symbol value unit reverse voltage byt08p/600a v r =v rrm 600 v g =repetitive peak reverse voltage byt08p/800a v r =v rrm 800 v peak forward surge current t p =10ms, half sinewave i fsm 50 a repetitive peak forward current i frm 16 a average forward current i fav 8 a junction and storage temperature range t j =t stg 40...+150 c maximum thermal resistance t j = 25 c parameter test conditions symbol value unit junction case r thjc 2.0 k/w junction ambient r thja 85 k/w
byt08p/600a/800a vishay semiconductors www.vishay.de w faxback +1-408-970-5600 rev. 4, 27-sep-00 2 (5) document number 86017 electrical characteristics t j = 25 c parameter test conditions type symbol min typ max unit forward voltage i f =8a v f 1.9 v g i f =8a, t j =100 c v f 1.8 v reverse current v r =v rrm i r 35 a v r =v rrm , t j =100 c i r 2 ma forward recovery time i f =8a; di f /dt 50a/ s t fr 350 ns turn on transient peak voltage f f v fp 4,5 v reverse recovery characteristics i f =8a, di f /dt 32a/ s, i rm 4 a y f f v batt =200v, t j =100 c t irm 160 ns reverse recovery time i f =8a, di f /dt 32a/ s, v batt =200v, t j =100 c, i r =0.25xi rm t rr 100 ns i f =0.5a, i r =1a, i r =0.25a t rr 50 ns reverse recovery current i f =1a, di f /dt 50a/ s, v batt =200v i rm 1.7 a reverse recovery time i f =1a, di f /dt 50a/ s, v batt =200v, i r =0.25xi rm t rr 75 ns characteristics (t j = 25 c unless otherwise specified) 0 40 80 120 160 0.1 1 10 100 1000 t j junction temperature ( 5 c ) 200 94 9357 i reverse current ( a ) r v r =v rrm figure 1. typ. reverse current vs. junction temperature 0 0 2 4 6 8 10 i average forward current ( a ) fav t amb ambient temperature ( 5 c ) 94 9355 40 80 120 160 200 10k/w r thja =8k/w r thjc =2k/w 20k/w 85k/w figure 2. max. average forward current vs. ambient temperature
byt08p/600a/800a vishay semiconductors www.vishay.de w faxback +1-408-970-5600 rev. 4, 27-sep-00 3 (5) document number 86017 0 0.6 1.2 1.8 2.4 0.01 0.1 1 10 100 i forward current ( a ) f v f forward voltage ( v ) 3.0 94 9356 figure 3. typ. forward current vs. forward voltage 0 50 100 200 300 0 40 80 120 160 t reverse recovery time for i ( ns ) irm di f /dt forward current rate of change ( a/ s ) 350 94 9358 250 150 rm i f =8a t c =100 5 c figure 4. reverse recovery time for i rm vs. forward current rate of change 0 i reverse recovery current ( a ) rm 94 9359 5 10 15 20 0 50 100 200 300 di f /dt forward current rate of change ( a/ s ) 350 250 150 i f =8a t c =100 5 c figure 5. reverse recovery current vs. forward current rate of change 0 50 100 150 200 250 94 9360 0 50 100 200 300 di f /dt forward current rate of change ( a/ s ) 350 250 150 t reverse recovery time ( ns ) rr i f =8a t c =100 5 c figure 6. reverse recovery time vs. forward current rate of change 0 200 400 600 800 1200 q reverse recovery charge ( nc ) rr 94 9361 1000 0 50 100 200 300 di f /dt forward current rate of change ( a/ s ) 350 250 150 i f =8a t c =100 5 c figure 7. reverse recovery charge vs. forward current rate of change
byt08p/600a/800a vishay semiconductors www.vishay.de w faxback +1-408-970-5600 rev. 4, 27-sep-00 4 (5) document number 86017 dimensions in mm 14276
byt08p/600a/800a vishay semiconductors www.vishay.de w faxback +1-408-970-5600 rev. 4, 27-sep-00 5 (5) document number 86017 ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( odss ). the montreal protocol ( 1987 ) and its london amendments ( 1990 ) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2 . class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency ( epa ) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c ( transitional substances ) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay-semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay-semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 ( 0 ) 7131 67 2831, fax number: 49 ( 0 ) 7131 67 2423
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